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US 6,184,561 B2Granted
Semiconductor pressure sensor having strain gauges and stress balance film
AssigneeDenso Corporation
InventorsHiroaki Tanaka, Inao Toyoda, Yasutoshi Suzuki
Life of this patent
Estimating the term…
Abstract
In a semiconductor pressure sensor having a diaphragm portion and strain gauges on the diaphragm portion, Al stress balance films are provided around the diaphragm portion to balance changes in stress of the strain gauges, which are produced by a change in temperature. As a result, sensor output is prevented from varying due to the change in temperature.
Claims14
A semiconductor pressure sensor comprising:
- a sensor chip having a diaphragm portion for being displaced upon receiving a pressure thereon;
- a plurality of resistive members provided on the diaphragm portion and respectively having changes in stress by a change in temperature;
- and
- a stress balance film provided on the sensor chip for balancing the changes in stress of the plurality of resistive members.
1 more element
A semiconductor pressure sensor comprising:
- a sensor chip having a diaphragm portion for being displaced upon receiving a pressure thereon;
- a plurality of resistive members provided on the diaphragm portion;
- a wiring member disposed on the sensor chip to be electrically connected to the plurality of resistive members, and exhibiting a yield phenomenon within an operational temperature range of the pressure sensor, which causes an unbalance among changes in stress of the plurality of resistive members;
- and
- a stress balance film disposed on the sensor chip to adjust the unbalance among the changes in stress of the plurality of resistive members.
2 more elements
A semiconductor pressure sensor comprising:
- a sensor chip having a diaphragm portion for being displaced upon receiving a pressure thereon;
- a plurality of resistive members provided on the diaphragm portion;
- and
- a wiring member disposed on the sensor chip and electrically connected to the plurality of resistive members, the wiring member being made of a material having a yield stress that is larger than a maximum stress produced therein at an operational temperature range of the pressure sensor.
1 more element
Dependencies are inferred from the claim text.