Semiconductor component with metal-semiconductor junction with low reverse current
AssigneeInfineon Technologies AG
InventorsWolfgang Werner, Jenoe Tihanyi
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Abstract
The semiconductor component, such as a Schottky diode with a low leakage current, has a metal-semiconductor junction between a first metal electrode and the semiconductor. The semiconductor, which is of a first conductivity type, has a defined drift path and a plurality of supplementary zones of a second conductivity type extending from the semiconductor surface into the drift path. A number of foreign atoms in the supplementary zones is substantially equal to a number of foreign atoms in intermediate zones surrounding the supplementary zones and the number of foreign atoms does not exceed a number corresponding to a breakdown charge of the semiconductor.
Claims8
A semiconductor component, comprising:
- a semiconductor of a first conductivity type with a surface and a drift path;
- a first metal electrode disposed on the surface of said semiconductor and forming a metal-semiconductor junction with said semiconductor;
- a plurality of supplementary zones of a second conductivity type disposed to extend from said surface into said drift path of said semiconductor, each of said supplementary zones includes a junction zone adjacent said first metal electrode and adjoining the surface of said semiconductor, said junction zone of each supplementary zone having a higher doping concentration than a remainder of said supplementary zone;
- a plurality of intermediate zones surrounding said supplementary zones;
- and
- said supplementary zones having a doping concentration substantially equal to a doping concentration in said intermediate zones not exceeding a doping concentration which would result in a barrier breakdown in said semiconductor.
Dependencies are inferred from the claim text.