Semiconductor light emitting device with light reflective current diffusion layer

Abstract

The LED element is die-bonded on the wiring pattern on the surface of the first white substrate facing to the cavity of the second white substrate by using electrically conductive materials as bonding material so that the LED element is accommodated in the cavity of the second white substrate and the p and n side electrodes on one side opposite to the light emitting surface of the sapphire substrate of the LED element are electrically connected with the through-hole conductors. The LED element which is die-bonded on the first white substrate is covered and sealed on its entire periphery with a light transmittable synthetic resin molded portion. The semiconductor light emitting device may have an enhanced light emission efficiency and can be formed in the flat form.

Dependencies are inferred from the claim text.