Back to results
US 6,184,536 B2Granted
Ion implantation process
AssigneeU.S. Philips Corporation
InventorsMartin J. Powell, Carl Glasse, Barry F. Martin
Life of this patent
Estimating the term…
Abstract
An ion implantation process comprises performing mass separation of ions from an ionised source of phosphorus so as to select the P2 ions and reject phosphorus hydride ion species. The P2 ions are injected into a semiconductor substrate. The rejection of phosphorus hydride ions species is facilitated because there are no such species adjacent (in terms of effective mass) the P2 ion species. The use of the P2 ion species also improves the implantation process for shallow implantation depths.
Claims5
An ion implantation process comprising;
- performing mass separation of ions from an ionised source of phosphorus so as to select P2 ions and reject phosphorus hydride ion species;
- and
- implanting the P2 ions into a semiconductor material.
Dependencies are inferred from the claim text.