Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
AssigneeNEC Corporation
InventorsNatsuko Ito, Fumihiko Uesugi, Tsuyoshi Moriya
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Abstract
In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
Claims13
A particle-removing apparatus in a semiconductor device manufacturing apparatus in which a high-frequency voltage is applied between an upper electrode and a lower electrode so as to generate a plasma within a processing chamber that processes a substrate located in said processing chamber, in which is provided a cover that covers said substrate, said substrate being covered by closing said cover, so as to prevent the attachment of particles within said processing chamber to said substrate, wherein said particle-removing apparatus comprising a first control means for controlling the timing of drive of said cover, said control means performing control so as to change said cover from an opened condition to a closed condition immediately before stopping the application of said high-frequency voltage.
A particle-removing method in a semiconductor device manufacturing apparatus in which a high-frequency voltage is applied so as to generate a plasma within a processing chamber that processes a substrate located in said processing chamber, in which is provided a cover that covers said substrate, said substrate being covered by closing said cover, so as to prevent the attachment of particles within said processing chamber to said substrate, wherein said particle-removing method comprising a first step of controlling said cover from the opened condition to the closed condition immediately before stopping the application of said high-frequency voltage.
A particle-removing method in a semiconductor device manufacturing apparatus in which a high-frequency voltage is applied so as to generate a plasma within a processing chamber that processes a substrate located in said processing chamber, in which is provided a cover that covers said substrate, said substrate being covered by closing said cover, so as to prevent the attachment of particles within said processing chamber to said substrate, said particle-removing method comprising:
- a first step of changing said cover from the opened condition to the closed condition;
- a second step of stopping the application of said high-frequency voltage immediately after said cover is placed in the closed condition;
- and
- a third step of imparting a potential to said cover.
Dependencies are inferred from the claim text.