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US 6,184,153 B2Granted
Semiconductor material produced by improved etch process which protects metal
AssigneeMicron Technology, Inc.
InventorsRobert T. Rasmussen, Surjit S. Chadha, David A. Cathey
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Abstract
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
Claims9
A semiconductor material that has an exposed metal component, the material etched by a process comprising:
- pretreating the semiconductor material with a first fluorocarbon surfactant to protect the metal component from corrosion;
- and
- exposing said pretreated material to an etchant bath comprising from about 0.03 to about 0.06 percent by weight of a second surfactant, from about 2 to about 4 percent by weight salt, from about 15 to about 30 percent by weight buffered oxide etch, the amount of salt being in excess of a solubility limit for the etchant;
- and agitating said bath.
1 more element
A semiconductor material that has an exposed metal component, the material etched by a process comprising:
- pretreating the semiconductor material with a fluorocarbon surfactant to protect the metal component from corrosion;
- and
- exposing said pretreated material to an etchant bath comprising sodium chloride in an amount in excess of a solubility limit for the etchant.
Dependencies are inferred from the claim text.