US 6,184,151 B2 · Method for forming cornered images on a substrate and photomask formed thereby

Abstract

A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.

Claims17

Dependent claims

A method of forming cornered images on a substrate comprising the steps of:

(a) providing a substrate having a first layer of selectively etchable material thereon;
(b) forming a plurality of parallel edged openings in the first layer of etchable material, the openings aligned to form pairs of straight-edged first regions;
(c) depositing a layer of selectively etchable material over the openings in said first layer of etchable material;
(d) forming a second plurality of parallel edged openings in the layer of patternable material, said second plurality of openings intersecting adjacent pairs of said straight-edged first regions forming a plurality of second regions bounded by two edges of one of said first regions and two edges of one of said second region;
and
(e) processing the substrate in the second regions defined by said first and second openings.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/275,541Filed 24 Mar 1999 · division

Priority

21 Aug 1997

Granted

6 Feb 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10B 12/0383
The capacitor being in a trench in the substrate: wherein the transistor is vertical
H10P 76/405
Of masks comprising inorganic materials: characterised by their composition, e.g. multilayer masks
H10P 76/408
Of masks comprising inorganic materials: characterised by their sizes, orientations, dispositions, behaviours or shapes
Y10S 438/942
Semiconductor device manufacturing: process: masking

Method for forming cornered images on a substrate and photomask formed thereby

Life of this patent

Method for forming cornered images on a substrate and photomask formed thereby

Life of this patent

Abstract

Claims17