Plasma producing tools, dual-source plasma etchers, dual-source plasma etching methods, and method of forming planar coil dual-source plasma etchers

A dual-source plasma etcher comprising:

• a chamber having an interior base and a conductive interior sidewall, at least a portion of the interior sidewall being groundable;
• a first RF power source mounted proximate the chamber and electrically coupled to an interior of the chamber;
• a dielectric covering disposed over the interior sidewall of the chamber;
• and
• an opening received by the dielectric covering and extending therethrough proximate the groundable portion of the interior sidewall, said opening exposing said interior sidewall groundable portion.

A dual-source plasma etcher comprising:

• a chamber having an interior base and a conductive interior sidewall;
• a first RF power source mounted proximate the chamber and electrically coupled to an interior of the chamber;
• a dielectric liner disposed over the interior sidewall;
• and
• a grounding path for plasma generated within the chamber, the grounding path extending through an opening in the dielectric liner to proximate an exposed portion of the interior sidewall.

A dual source plasma processing tool comprising:

• a chamber having a surface area;
• at least one grounding electrode covering less than an entirety of the surface area;
• and
• a dielectric covering disposed over a remaining portion of the surface area.

A dual source plasma processing tool comprising:

• a chamber having a surface area;
• a grounding node having an opening over a portion of the surface area;
• and
• a dielectric liner disposed over the surface area portion.

A dual-source plasma etching method comprising:

• providing a dual-source plasma etching chamber having an interior base and an interior sidewall, at least a portion of the interior sidewall being grounded;
• providing a dielectric liner over only a portion of the interior sidewall of the chamber;
• grounding a portion of the interior sidewall not having the dielectric liner there over;
• and
• generating a plasma within the chamber, at least some of the plasma being disposed along the grounding path and in electrical contact with the grounded interior sidewall portion.

A method of forming a plasma processing tool comprising:

• providing a chamber having an interior conductive groundable surface having an area;
• mounting at least one grounding electrode over and in operative contact with a first portion of the surface;
• and
• providing a dielectric covering disposed over a second portion of the surface area.

A method of forming a plasma processing tool comprising:

• providing a chamber having an interior conductive groundable surface having a surface area;
• forming a grounding node disposed over and in operative contact with the surface, the grounding node having an opening over a portion of the surface area;
• and
• disposing a dielectric covering over the surface area portion.

A plasma processing chamber comprising:

• a base;
• a conductive interior sidewall having an edge disposed adjacent the base, the sidewall having a surface area;
• a removable dielectric liner covering a portion of the surface area, the dielectric liner including a plurality of openings received therein and extending therethrough proximate the conductive interior sidewall, the dielectric covering comprising a generally frustum-shaped interior surface;
• and
• a grounding node formed on a portion of the surface area other than the portion covered by the liner.

A method of etching a wafer in a plasma etcher comprising:

• placing a wafer within a chamber having a base and conductive sidewalls;
• insulating a first portion of the sidewalls using a dielectric liner to cover the portion;
• grounding a second portion of the sidewalls that is not covered by the dielectric liner;
• and
• forming a plasma in the chamber.