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US 6,184,131 B2Granted
Process of forming solid thin film from layer of liquid material without void and film forming apparatus used therein
AssigneeNEC Corporation
InventorKazumi Sugai
Life of this patent
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Abstract
A solid thin film is formed from a layer of liquid material in such a manner as to fill a contact hole formed in a semiconductor structure; a semiconductor structure is firstly cooled rather than ambience, thereafter, liquid material is spread over the semiconductor structure, then the layer of liquid material is pressed so that the liquid material perfectly fills the contact hole, and, finally, the layer of liquid material is heated so as to form a solid layer from the layer of liquid material.
Claims11
A process of forming a solid thin film, comprising the steps of:
- a) preparing a substrate structure having at least one recess open to a surface of said substrate structure;
- b) changing the temperature of said substrate structure to lower than an ambient temperature;
- c) creating vacuum around said substrate structure;
- d) supplying liquid material onto said surface structure so as to form a layer of liquid material on said surface;
- e) pressing through exposure to high-pressure gas said layer of liquid material so as to perfectly fill said recess with said liquid material, wherein said high-pressure gas is selected from the group consisting of inert gas, hydrogen, nitrogen and a mixtures containing at least two gases selected from said group, and wherein and said high-pressure gas contains at least one element selected from Cu, Sc, Ti, Co, and W;
- and
- f) heating said liquid material so as to form a solid layer from said liquid layer.
4 more elements
Dependencies are inferred from the claim text.