Low resistivity poly-silicon gate produced by selective metal growth

A method of fabricating a polymetal silicide conductor/gate comprising:

• forming polysilicon and sacrificial material into a gate and conductor pattern over a gate oxide;
• creating gate sidewalls that protect the sides of said polysilicon and sacrificial material;
• implanting the source and drain for said polysilicon;
• stripping said sacrificial material to expose said polysilicon;
• forming a diffusion barrier over said exposed polysilicon;
• and
• selectively forming a conductive metal on said diffusion barrier.

A method of fabricating a polymetal silicide conductor/gate for embedded memory comprising:

• patterning polysilicon and sacrificial material into gates and conductors over a gate oxide;
• creating gate sidewalls that protect the sides of said polysilicon and sacrificial material;
• implanting the sources and drains for said gates;
• patterning a polysilicon plug between said polysilicon sidewalls;
• oxidizing exposed surfaces of said polysilicon plug;
• stripping said sacrificial material from said polysilicon;
• forming diffusion barriers over said exposed polysilicon;
• selectively forming a depositable conductive metal gate contact on said diffusion barriers;
• and
• depositing a dielectric layer over said metal, said sidewalls and said gate oxide.