Method of dividing a wafer and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming semiconductor elements in a major surface of a wafer;
• forming grooves in said major surface of the wafer along dicing lines on the wafer by means of a dicing blade, said grooves being deeper than a thickness of a finished chip;
• attaching an adhesive sheet on said major surface of the wafer;
• lapping and polishing a bottom surface of the wafer to said thickness of the finished chip, thereby dividing the wafer into chips;
• and
• separating each of the divided chips from the adhesive sheet and sealing said each chip in a package,
• wherein in the step of dividing the wafer into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

A wafer dividing method comprising the steps of:

• forming grooves in a surface of a wafer, on which semiconductor elements are formed, along dicing lines, the grooves being deeper than a thickness of a finished chip, and the thickness of the finished chip being not more than 290 μm;
• attaching a holding member on the surface of the wafer on which the semiconductor elements are formed;
• and
• lapping and polishing a rear surface of the wafer until the wafer has a thickness of a finished chip, by rotating both the wafer and a lapping/polishing grindstone, thereby dividing the wafer into chips.

A wafer dividing method comprising the steps of:

• forming grooves in a surface of the wafer, on which semiconductor elements are formed along dicing lines, the grooves being deeper than a thickness of a finished chip;
• attaching a holding member provided with an adhesive sheet to the surface of the wafer on which the semiconductor elements are formed;
• and
• lapping and polishing a rear surface of the wafer until the wafer has a thickness of the finished chip, thereby dividing the wafer into chips,
• wherein, in said attaching step, an ultrathin film is interposed between the holding member and the surface of the wafer on which the semiconductor elements are formed.

A wafer dividing method comprising the steps of:

• forming semiconductor elements on a major surface of a wafer;
• forming grooves in the major surface of a wafer along dicing lines, the grooves being deeper than a thickness of a finished chip;
• attaching a holding member provided with an adhesive sheet to the surface of the wafer on which the semiconductor elements are formed;
• lapping and polishing a rear surface of the wafer until the wafer has the thickness of the finished chip by rotating both a grindstone and the wafer, thereby dividing the wafer into chips;
• and
• separating the chips from the adhesive sheet and sealing each of the chips in a package,
• wherein said holding member is at least one selected from the group consisting of an adhesive tape, a wax, an adsorption pad, a thermocompression bonding sheet, a substrate coated with adhesive material, and a resist coated on the semiconductor elements.

A wafer dividing method comprising the steps of:

• forming semiconductor elements on a major surface of a wafer;
• forming grooves in the major surface of the wafer, on which the semiconductor elements are formed, along dicing lines, the grooves being deeper than a thickness of a finished chip, and the thickness of the finished chip being not more than 290 μm;
• attaching a holding member provided with an adhesive sheet to the surface of the wafer on which the semiconductor elements are formed;
• lapping and polishing a rear surface of the wafer until the wafer has the thickness of the finished chip by rotating both the wafer and a lapping/polishing grindstone, thereby dividing the wafer into chips;
• and
• separating the chips from the adhesive sheet and sealing each of the chips in a package.