Field effect transistor device and method of manufacturing the same
AssigneeSony Corporation
InventorTakashi Noguchi
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Abstract
In a field effect transistor, an Si1-xGex layer is provided between a source or drain electrode deriving region and a corresponding metal (interconnection) electrode or between a contact deriving region and a metal layer formed on the upper portions of the contact deriving region to form an ohmic contact to thereby prevent the aluminum metal layer from penetrating into a p-n junction and to reduce a contact resistance.
Claims20
A method of manufacturing an insulating gate type field effect transistor in which metal electrodes are ohmically connected to a gate electrode and to source and drain portions of a silicon semiconductor substrate, said method comprising:
- forming an insulating layer on said substrate having openings therein through which said source and drain portions are formed;
- forming said gate electrode and said source and drain portions;
- epitaxially growing an Si1-xGex layer selectively only on said gate electrode and on said source and drain portions exposed through said openings of said insulating layer, said growing an Si1-xGex layer being performed by vapor growth epitaxy;
- and
- depositing metal electrodes on said Si1-xGex layer.
Dependencies are inferred from the claim text.