Process for fabricating semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
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Abstract
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
Claims33
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface by CVD;
- crystallizing said semiconductor film by heating;
- annealing said semiconductor film in an oxidizing gas containing atmosphere;
- irradiating the crystallized semiconductor film by an excimer laser beam;
- heating the semiconductor film at 400° C. or higher to reduce a spin density of said semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface by CVD;
- crystallizing said semiconductor film by heating;
- forming a silicon oxide film on said semiconductor film;
- irradiating a laser beam to said semiconductor film through said silicon oxide film;
- and then
- heating the semiconductor film at 400° C. or higher to reduce a spin density of said semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface by CVD;
- crystallizing said semiconductor film by heating;
- irradiating the crystallized semiconductor film by an excimer laser beam;
- heating the semiconductor film at 400° C. or higher to reduce a spin density of said semiconductor film;
- and then
- said method further comprising a step of oxidizing a surface of said semiconductor film after the crystallization thereof.
A method for manufacturing a semiconductor device comprising the steps of:
- heat treating an amorphous semiconductor film in a nitrogen containing atmosphere to crystallize the amorphous semiconductor film;
- irradiating a laser beam or an intense light to crystalline semiconductor film to further improve the crystallinity;
- heat treating the irradiated semiconductor film to reduce a number of spin density in the crystallized semiconductor film in a nitrogen containing atmosphere;
- and then,
- heat treating the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
A method for fabricating a semiconductor device comprising the steps of:
- thermally crystallizing an amorphous semiconductor film;
- irradiating a laser beam to crystalline the semiconductor film after said thermally crystallizing step;
- annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of spin density in the semiconductor film;
- and then,
- annealing the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
A method for fabricating a semiconductor device comprising the steps of:
- heat treating an amorphous semiconductor film to crystallize an amorphous semiconductor film;
- irradiating a laser beam or an intense light to the crystalline semiconductor film to further improve the crystallinity;
- heat treating the irradiated semiconductor film to reduce the number of dangling bonds in the crystallized semiconductor film;
- and then,
- heat treating the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
A method for fabricating a semiconductor device comprising the steps of:
- thermally crystallizing an amorphous semiconductor film;
- irradiating a laser beam to crystalline the semiconductor film after said thermally crystallizing step;
- annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of dangling bonds in the semiconductor film;
- and then,
- annealing the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
Dependencies are inferred from the claim text.