Semiconductor die back side surface and method of fabrication
AssigneeMicron Technology, Inc.
InventorsTongbi Jiang, Chad A. Cobbley
Life of this patent
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Abstract
A method of physically altering the backside surface of a semiconductor wafer or other substrate, and resulting article, to improve adhesion between the backside surface of semiconductor dice singulated from the wafer and a die attach adhesive or encapsulation compound. The physically altered backside surface reduces or substantially eliminates delamination and cracking damage in a semiconductor die assembly due to semiconductor wafer tape contamination and subsequent moisture penetration. The physically altered backside surface further reduces both semiconductor wafer tape contamination and shear stress along the interface between the semiconductor die backside surface and the die attach adhesive or encapsulation compound.
Claims37
A semiconductor component assembly, comprising:
- a semiconductor component comprising an active surface and a back side surface, said back side surface having a substantially non-planar texture wherein said substantially non-planar texture of the back side surface has a peak to valley amplitude measuring between about 5 μm and 25 μm.
A semiconductor component assembly, comprising:
- at least a portion of a semiconductor wafer including an active surface and a back side surface, said back side surface having a substantially non-planar texture;
- and
- wafer tape attached intermittently to portions of the back side of said at least a portion of said semiconductor wafer.
A semiconductor component assembly comprising:
- a plurality of singulated semiconductor dice each including an active surface and a back side surface, said back side surface having a substantially non-planar texture;
- and
- wafer tape attached intermittently to portions of the back side surface of said plurality of singulated semiconductor dice.
A method of fabricating a semiconductor component comprising:
- providing a semiconductor component having an active surface and a back side surface;
- and
- texturing the back side surface of said semiconductor component to create a substantially non-planar surface over the back side surface wherein said substantially non-planar surface has a peak to valley amplitude measuring between about 5 μm and 25 μm.
Dependencies are inferred from the claim text.