Process of making diamond-metal ohmic junction semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsKeiji Hirabayashi, Masaaki Matsushima
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Abstract
A diamond product comprising a semiconductor layer having an outer surface region of graphite in contact with the metal electrode to form an ohmic junction with the metal electrode, wherein the outer surface region of graphite has a thickness of at least about 12 Å.
Claims4
A process for forming a diamond product which comprises a stabilized outer surface of a graphite formed on a diamond layer and a metal layer, comprising the steps of:
- forming the diamond layer on a substrate using a carbon-containing gas;
- forming the stabilized outer surface of graphite to a thickness of 1.0 nm or more by increasing the concentration of carbon-containing gas to 1.2% or higher and increasing the substrate temperature to 1000° or higher in a final stage of forming the diamond layer;
- and
- forming the metal layer on the stabilized outer surface of graphite.
A process for forming a diamond-metal product comprising a semiconductor layer having a stabilized outer surface region of a graphite in contact with a metal electrode to form an ohmic junction with said metal electrode, comprising steps of:
- forming the semiconductor diamond layer using a carbon source on a substrate;
- forming the stabilized outer surface of graphite to a thickness of 1.0 nm or more by increasing the concentration of carbon-containing gas to 1.2% or higher and increasing the substrate temperature to 1000° C. or higher in a final stage of forming the diamond layer;
- and
- forming the metal electrode on the surface of graphite.
Dependencies are inferred from the claim text.