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US 6,184,050 B2Granted
Method for forming a photodiode
AssigneeUnited Microelectronics Corp.
InventorJen-Yao Hsu
Life of this patent
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Abstract
A method for forming a photodiode is provided. A substrate having a well with a first electric type therein is provided. An insulating layer is formed on the substrate. The insulating layer is patterned to form an opening. The insulating layer still remains with a thin thickness below the bottom of the opening. A heavily doped region with a second electric type is formed in the well in the position below the opening. A junction is thus formed between the heavily doped region and the well.
Claims2
A method for forming a photodiode, comprising the steps of:
- providing a substrate with a pad oxide layer thereon;
- forming a well with a first electric type in the substrate under the pad oxide layer;
- forming a field oxide layer on the substrate;
- forming an opening in the field oxide layer above the well, wherein a depth of the opening is less than a thickness of the field oxide layer;
- and
- performing an ion implanting process to form a heavily doped region with a second electric type in the well under the opening, wherein the ion implanting process is performed with a tilt angle of less than 60 degrees and with an energy of about 30-560 Kev.
3 more elements
A method for forming a photodiode, comprising the steps of:
- providing a substrate with a first electric type;
- forming an insulating layer on the substrate;
- forming an opening in the insulating layer, wherein a depth of the opening is less than a thickness of the insulating layer;
- and
- performing an ion implanting process to form a heavily doped region with a second electric type in the substrate under the opening, wherein the ion implanting process is performed with a tilt angle of less than 60 degrees and with an energy of about 30-560 Kev.
2 more elements
Dependencies are inferred from the claim text.