Method of retaining the integrity of a photoresist pattern
AssigneeIntegrated Device Technology, Inc.
InventorsChen-Yu Wang, Tseng You Syau, Ching-Kai Lin
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Abstract
A method of retaining the integrity of a photoresist pattern is provided where the patterned photoresist is treated prior to etching the principle layer. The pre-etch treatment encompasses a plasma treatment. In some embodiments employing an anti-reflective coating (ARC) layer, an isolation/protective layer is used to isolate the ARC from the photoresist. In some embodiments, the pre-etch treatment, advantageously provides for patterning the isolation/protection layer.
Claims19
A method for retaining the integrity of a photoresist pattern comprising:
- patterning a photosensitive material to form photoresist portions overlying a semiconductor substrate, said substrate including at least one layer of material formed thereon;
- and
- treating said photoresist portions with a plasma derived from a fluorocarbon to form etch resistant photoresist portions,
- said treating of said etch resistant photoresist portions including simultaneously etching of at least one layer disposed on said semiconductor substrate.
A method for patterning a metal layer overlying a semiconductor substrate comprising:
- forming a patterned layer of photosensitive material overlying a metal layer disposed on said substrate;
- treating said patterned layer of photosensitive material with a plasma derived from a gas mixture comprising CHF3, said treating of said patterned layer of photosensitive material including simultaneously etching of an isolation/capping layer disposed on said metal layer to expose portions of said metal layer;
- and
- etching said metal layer to remove said exposed portions of said metal layer.
A method for retaining the integrity of a photoresist pattern comprising:
- forming a pattern of photosensitive resist over a metal layer disposed on a substrate wherein portions of said metal layer are exposed;
- treating said pattern of photosensitive resist with a plasma derived from a fluorocarbon to form etch resistant resist;
- and
- etching an isolation/protection layer disposed on said exposed portions of said metal layer, simultaneously with said treating said pattern of photosensitive resist with said plasma.
Dependencies are inferred from the claim text.