Method for processing a poly defect
AssigneeUnited Semiconductor Corp.
InventorsChen-Chih Tsai, Yung-Hui Feng
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Abstract
A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.
Claims9
A method for processing a poly defect, wherein a substrate having a first oxide layer is provided, a polysilicon layer is formed on the oxide layer, and a poly defect is formed on the polysilicon layer surface during polysilicon layer formation, the method comprising the steps of:
- forming a second oxide layer to cover the poly defect and conformal to the poly defect;
- polishing a portion of the second oxide layer and the poly defect until a thin second oxide layer and a thin poly defect layer are left, wherein the poly defect is surrounded by the second oxide layer;
- and
- removing the thin second oxide layer, so as to expose the polysilicon layer.
Dependencies are inferred from the claim text.