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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTadashi Otake, Norihisa Mino, Tohru Nakagawa, Mamoru Soga, Kazufumi Ogawa, Takaiki Nomura, Yasuo Takebe
Estimating the term…
A method for forming a molecular film includes the steps of: coating a surface of a substrate having active hydrogen atoms on its surface with a coating solution containing a silane-based compound having at least one reactive group selected from the group consisting of a chloro group, an alkoxy group and an isocyanate group; and effecting an elimination reaction between the active hydrogen atoms on the surface of the substrate and reactive groups of the silane-based compound, thereby covalently bonding the silane-based compounds to the surface of the substrate. The substrate is supplied to a chamber in which an atmosphere is maintained at a low water vapor density. The surface of the substrate is coated with a coating solution containing the silane-based compound and a solvent by using a transfer element. A dehydrochlorination reaction is effected between the active hydrogen atoms and the chloro groups of the silane-based compounds. Thereafter, any coating solution containing unreacted silane-based compounds after coating is removed inside or outside the chamber.
An apparatus for forming a molecular film comprising a chamber, the chamber comprising an element for transporting a substrate from an inlet to an outlet, a transfer element for coating a surface of the substrate with a coating solution containing silane-based compounds and a solvent, and an element for maintaining the atmosphere in the chamber at a low water vapor density, the water vapor density being in the range of 0 to 0.0076 kg/m3, the apparatus further comprising an element for removing any coating solution containing unreacted silane-based compounds after the process of coating, the element for removing being inside or outside the chamber.
Dependencies are inferred from the claim text.