Chemical-mechanical polish machines and fabrication process using the same
AssigneeUnited Microelectronics Corp.
InventorsJuen-Kuen Lin, Chien-Hsin Lai, Peng-Yih Peng, Kun-Lin Wu, Daniel Chiu, Chih-Chiang Yang, Juan-Yuan Wu, Hao-Kuang Chiu
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Abstract
A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.
Claims10
A chemical mechanical process, to planarize a surface of a wafer, comprising:
- disposing the wafer within a polishing head with the surface facing down on a polishing table;
- retaining the wafer within the polishing head by a retainer ring, the retainer ring comprising a plurality of slurry passages gradually expanding from an outer perimeter of the retainer ring to an inner perimeter next to the wafer of the retainer ring;
- supplying slurry from a slurry supplier, the slurry being evenly distributed over wafer through the slurry passages of the retainer ring;
- and
- rotating the polishing table and spinning the polishing head.
A chemical mechanical polishing process for polishing a wafer having an electronic structure formed thereon, comprising:
- providing the wafer;
- forming a deposition layer on the wafer;
- and
- polishing the deposition layer using a chemical mechanical polishing machine with a retainer ring having a plurality of slurry passages extending from an inner surface to an outer surface of the retainer ring to obtain an evenly distributed slurry over the deposition layer, wherein each of the slurry passage has a diffusion angle between 0° to 10°.
Dependencies are inferred from the claim text.