Semiconductor supercapacitor system, method for making same and articles produced therefrom
AssigneeEnergenius, Inc.
InventorsMark Farrell, Harry Eugen Ruda, Yuichi Masaki
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AssigneeEnergenius, Inc.
InventorsMark Farrell, Harry Eugen Ruda, Yuichi Masaki
Estimating the term…
The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.
A thin film composite of a substrate and a thin film, wherein the thin film comprises BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0, and further wherein the thin film composite has a storage capacity of at least 0.3 farad/cm3.
A thin film composite of substrate and a thin film, wherein the thin film comprises MdBaaTibOc wherein “M” is Au, Cu, Ni3Al, Ru or InSn, and b are independently from about 0.75 to about 1.25, c is about 2.5 to about 5.0 and d is about 0.01 to 0.25, and further wherein the thin film composite has a storage capacity of at least 0.3 farad/cm3.
A thin film composite comprising a thin film, wherein the thin film comprises BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0, and further wherein the thin film contains a sufficient amount of a component which induces internal strain in the thin film of thin film composite.
A BaaTibOc thin film composite produced by:
A MaBabTicOd thin film composite produced by the process which comprises:
A BaaTibOc thin film composite wherein a and b independently are from about 0.75 to about 1.25 and c is about 2.5 to about 5.0 produced by the process which comprises:
A MaBabTicOd thin film composite wherein M is Au, Cu, Ni3Al, Ru or InSn, a and b are independently about 0.75 to about 1.25, c is about 2.5 to about 5.0 and d is about 0.01 to about 0.25 produced by the process which comprises:
A BaaTibOc thin film composite wherein a and b are independently about 0.75 to about 1.25 and c is about 2.5 to about 5.0 produced by the process which comprises:
A MaBabTicOd thin film composite wherein M is Au, Cu, Ni3Al, Ru or InSn, a and b are independently about 0.75 to about 1.25, c is about 2.5 to about 5.0 and d is about 0.01 to about 0.25 produced by the process which comprises:
Dependencies are inferred from the claim text.