Perforated plasma confinement ring in plasma reactors
AssigneeLam Research Corporation
InventorsLumin Li, George Mueller
Life of this patent
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AssigneeLam Research Corporation
InventorsLumin Li, George Mueller
Estimating the term…
The invention relates to a plasma processing reactor apparatus for semiconductor processing a substrate. The apparatus includes a chamber. The apparatus further includes a top electrode configured to be coupled to a first RF power source having a first RF frequency and a bottom electrode configured to be coupled to second RF power source having a second RF frequency that is lower than the first RF frequency. The apparatus additionally includes an insulating shroud that lines an interior of the chamber, the insulating shroud being configured to be electrically floating during the processing. The apparatus further includes a perforated plasma confinement ring disposed outside of an outer periphery of the bottom electrode, a top surface of the perforated plasma confinement ring being disposed below a top surface of the substrate and electrically grounded during the processing.
A plasma processing reactor for processing a substrate comprising:
A perforated plasma confinement ring for continuing a plasma inside a process chamber of a plasma reactor during processing of a substrate, the process chamber having a liner with either an electrically insulating material or a material that is electrically floating, the perforated plasma confinement ring comprising:
A perforated plasma confinement ring for containing a plasma inside a process chamber of a plasma reactor during processing of a substrate, the plasma reactor including a bottom electrode and a side wall formed from either an electrically insulating material or a material that is electrically floating, the perforated plasma confinement ring comprising:
Dependencies are inferred from the claim text.