Method of manufacturing a thin film transistor using multiple sputtering chambers

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film comprising silicon oxide over said gate electrode in said first chamber;
• transferring the substrate after forming said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• and
• forming source and drain regions with said channel region extending therebetween;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising:

• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said gate insulating film wherein said gate insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• and
• forming source and drain regions with said channel region extending therebetween;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• and
• forming source and drain regions with said channel region extending therebetween;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• forming an insulating film comprising silicon oxide over a substrate;
• forming a semiconductor film comprising amorphous silicon on said insulating film successively after the formation of said insulating film without exposing said insulating film to air, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor,
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming an insulating film comprising silicon oxide over a substrate in said first chamber;
• transferring the substrate after forming said insulating film from said first chamber to said second chamber without exposing said insulating film;
• forming a semiconductor film comprising amorphous silicon on said insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• forming an insulating film comprising silicon oxide over a substrate by sputtering using a sputtering gas containing oxygen;
• forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said insulating film wherein said insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming an insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said insulating film from said first chamber to said second chamber without exposing said insulating film to air;
• forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film comprising silicon oxide over said gate electrode in said first chamber;
• transferring the substrate after forming said gate insulating film from said first chamber to said second chamber through said third chamber;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• and
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;
• forming an insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said insulating film from said first chamber to said second chamber through said third chamber;
• forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• crystallizing said semiconductor film including said portion after the formation of said semiconductor film;
• wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising:

• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film by sputtering over said gate electrode;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film successively by sputtering after the formation of said gate insulating film without exposing said gate insulating film to air, said semiconductor film comprising hydrogen and having a portion to become a channel region of said transistor, and
• forming source and drain regions with said channel region extending therebetween.

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film by sputtering over said gate electrode in said first chamber;
• transferring the substrate after forming said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;
• forming a semiconductor film comprising amorphous silicon by sputtering on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• and
• forming source and drain regions with said channel region extending therebetween.

A method of manufacturing an insulated gate field effect transistor comprising:

• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said gate insulating film wherein said gate insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• and
• forming source and drain regions with said channel region extending therebetween.

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;
• forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;
• and
• forming source and drain regions with said channel region extending therebetween.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;
• forming a gate electrode over a substrate;
• forming an insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said insulating film from said first chamber to said second chamber without exposing said insulating film to air;
• forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.

A method of manufacturing an insulated gate field effect transistor comprising:

• preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;
• forming a gate electrode on an insulating surface of a substrate;
• forming a gate insulating film by sputtering over said gate electrode in said first chamber;
• transferring the substrate after forming said gate insulating film from said first chamber to said second chamber through said third chamber;
• forming a semiconductor film comprising amorphous silicon by sputtering on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.

A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

• preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;
• forming an insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;
• transferring the substrate after the formation of said insulating film from said first chamber to said second chamber through said third chamber;
• forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.