Process for preparing bulk cubic gallium nitride
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorAndrew P. Purdy
Life of this patent
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Abstract
Bulk cubic gallium nitride is made by charging into a reaction vessel to a fill of 25-95% having a temperature difference between its ends of at least 1° C. a gallium precursor, sufficient amount of an acid mineralizer to form product zinc blende gallium nitride, and sufficient amount of ammonia to at least solubilize the precursor; sealing the reaction vessel; heating contents of the reaction vessel to at least 150° C. while autogenously pressurizing contents of the reaction vessel to at least 500 psi for a duration sufficient to form the product zinc blend gallium nitride; cooling contents of the reaction vessel; and removing from the reaction vessel the product zinc blende gallium nitride.
Claims18
A process for preparing cubic GaN comprising the steps of
- (a) charging into a reaction vessel to a fill factor of 25-95% and having a temperature difference between its ends of at least 1° C. a gallium precursor, an acid mineralizer to form product cubic gallium nitride and a nitriding solvent to at least solubilize the precursor;
- (b) closing the reaction vessel;
- (c) heating contents of the reaction vessel to at least 150° C. while autogenously pressurizing contents of the reaction vessel to at least 500 psi for a duration sufficient to form cubic gallium nitride;
- (d) cooling contents of the reaction vessel;
- and
- (e) removing from the reaction vessel the product cubic gallium nitride.
A process for makinq cubic GaN comprising the steps of
- (a) charging to an elongated quartz reaction vessel having a temperature difference between its ends of at least 1° C. ammonia solvent, a gallium precursor, and ammonium iodide acid mineralizer in amount of 0.05-0.5 mole per mole of the precursor, the reaction vessel having a fill factor of 25-95%;
- (b) sealing the reaction vessel from the atmosphere;
- (c) placing the sealed reaction vessel within a pressure vessel in a spaced relationship thereto forming a space therebetween with a fluid disposed in the space;
- (d) pressurizing the fluid to impart counter pressure on the reaction vessel;
- (e) heating contents of the reaction vessel at 430-530° C. for ½-50 hours by placing the loaded pressure vessel into a furnace whereby contents of the reaction vessel are subjected to high pressure and temperature of 430-530° C. and form product cubic gallium nitride;
- (f) cooling contents of the reaction vessel;
- and
- (g) removing the product cubic GaN from the reaction vessel.
Dependencies are inferred from the claim text.