Liquid crystal display device having light shielding layer forms over a TFT and form of an acrylic resin having carbon black particles with diameter of 1mm
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takeshi Nishi
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Abstract
In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material.
Claims18
An active matrix electro-optical device comprising:
- a substrate;
- a pixel electrode provided over said substrate;
- at least one transistor connected with said pixel electrode and provided over said substrate;
- and
- a light shielding layer comprising a resin provided adjacent to said substrate over said transistor, wherein said resin comprises an acrylic resin containing a carbon black having an average diameter of 0.1 μm or less.
An active matrix electro-optical device comprising:
- a substrate;
- a pixel electrode provided over said substrate in an active matrix circuit;
- at least one transistor provided in a peripheral driver circuit for driving said active matrix circuit, said peripheral driver circuit being arranged over said substrate around said active matrix circuit;
- and
- a light shielding layer comprising a resin provided adjacent to said substrate over said transistor,
- wherein said resin comprises an acrylic resin containing a carbon black having an average diameter of 0.1 μm or less.
An active matrix electro-optical device comprising:
- a substrate;
- a transistor having a channel forming region comprising amorphous silicon provided over said substrate;
- and
- a light shielding layer comprising a resin provided adjacent to said substrate over said transistor,
- wherein said resin comprises an acrylic resin containing a carbon black having an average diameter of 0.1 μm or less.
An active matrix electro-optical device comprising:
- a substrate;
- a transistor having a channel forming region comprising polysilicon provided over said substrate;
- and
- a light shielding layer comprising a resin provided adjacent to said substrate over said transistor,
- wherein said resin comprises an acrylic resin containing a carbon black having an average diameter of 0.1 μm or less.
An active matrix electro-optical device comprising:
- a substrate;
- a transistor provided over said substrate;
- and
- a light shielding layer comprising a resin provided adjacent to said substrate over said transistor,
- wherein said resin comprises an acrylic resin containing a carbon black having an average diameter of 0.1 μm or less.
Dependencies are inferred from the claim text.