Opto-electronic sensor component

Opto-electronic sensor component having a radiation side, the component comprising:

• a first semi-conducting layer with a preset conduction type;
• a second semi-conducting layer of a different conduction type than the first semi-conducting layer;
• at least one transition area between the first and second semi-conducting layers;
• at least one first surface on the radiation side through which electromagnetic radiation to be detected can penetrate into the at least one transition area;
• two electrodes, each with a contact point, mounted on a second surface of the component, which is opposite the at least one first surface on the radiation side, for connecting the two semi-conducting layers to an electric circuits, wherein the two electrodes are spaced from the first surface;
• at least one connecting element for connecting one of the contact points with the second semi-conducting layer,
• wherein the at least one connecting element is of the same conduction type as the second semi-conducting layer, and
• wherein the semi-conducting connecting element, being an extension of the second semi-conducting layer, forms a single conducting connection between the second semi-conducting layer and a respective one of the electrodes and is in direct contact with the respective one of the electrodes.