Method of estimating lifetime of floating SOI-MOSFET
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorShigenobu Maeda
Life of this patent
Estimating the term…
Abstract
In a method of estimating the lifetime of a floating SOI-MOSFET, constants A and B, stress condition dependency Idt(S) of a drain current and stress condition dependency Isub(S) of a substrate current in a body-fixed SOI-MOSFET, and stress condition dependency Idf(S) of a drain current in the floating SOI-MOSFET are obtained from experiment to estimate lifetime υf(S) from the following equation: τ f ( S ) = A · W f 1 Id f ( S ) ( Isub ( S ) Id t ( S ) ) - B ( 5 ) where Wf represents a known channel width of the floating SOI-MOSFET.
Claims2
A method of estimating a lifetime of a floating SOI-MOSFET, comprising the steps of:
- measuring a drain current Idf in said floating SOI-MOSFET;
- measuring a drain current Idt and a substrate current Isub in a body-fixed SOI-MOSFET;
- estimating a hole current Ihf of said floating SOI-MOSFET under a hot carrier stress condition based on an approximation equation:
- Ihf≈(Idf/Idt)Isub;
- and
- estimating a lifetime of said floating SOI-MOSFET by using said estimated hole current Ihf.
A method of estimating a hole current Ihf of a floating SOI-MOSFET, comprising the steps of:
- measuring a drain current Idf in said floating SOI-MOSFET;
- measuring a drain current Idt and a substrate current Isub in a body-fixed SOI-MOSFET;
- and
- estimating a hole current Ihf of said floating SOI-MOSFET under a hot carrier stress condition based on an approximation equation:
- Ihf≈(Idf/Idt)Isub.
Dependencies are inferred from the claim text.