Non-volatile magnetic random access memory

A non-volatile random access memory comprising a plurality of magnetoresistive memory elements connected by sets of non-intersecting conductor sense lines, the non-intersecting conductor sense lines defining the address of each memory element and being connectable to a magnetic write/read recording unit for writing and reading the magnetic state (“0”, “1”) of each memory element by passing current in its conductor sense lines;

• wherein the memory elements are a plurality of magnetoresistive submicron dots or wires embedded in a membrane through which the submicron dots or wires extend, the sets of non-intersecting conductor sense lines being connected to the opposite ends of the submicron dots or wires on opposite sides of the membrane;
• each magnetoresistive submicron dot or wire being composed of ferromagnetic material or a combination of ferromagnetic and non-ferromagnetic materials having at least two magnetic states (“0”;
• “1”), writeable and readable absent an induced magnetic field therein by passing there through an electric current, writeable by passing a writing current pulse in its conductor lines sufficient to switch its magnetic states and readable by passing a current in its conductor lines below the level for switching its magnetic states.