CVD nanoporous silica low dielectric constant films

A process for depositing a low dielectric constant film on a patterned metal layer on a substrate, comprising:

• depositing a conformal lining layer on the patterned metal layer from process gases comprising one or more reactive silicon containing compounds;
• depositing a peroxide compound on the conformal lining layer;
• reacting the deposited peroxide compound with a compound or mixture having one or more thermally labile groups containing oxygen;
• and
• annealing the substrate to form a silicon oxide based film;
• whereby dispersed voids are formed in the silicon oxide based film.

A method of forming a dual damascene structure, comprising:

• depositing a peroxide compound on a surface of a substrate;
• reacting the deposited peroxide compound with a compound or mixture comprising thermally labile groups;
• and
• annealing the substrate to form a first silicon oxide based film, whereby dispersed voids are formed in the first silicon oxide based film;
• depositing a low k etch stop on the first silicon oxide based film;
• etching the low k etch stop to define a vertical interconnect opening that exposes the first silicon oxide based film;
• depositing the peroxide compound on the low k etch stop and the exposed first silicon oxide based film;
• reacting the deposited peroxide compound with the compound or mixture comprising thermally labile groups;
• and
• annealing the substrate to form a second silicon oxide based film, whereby dispersed voids are formed in the second silicon oxide based film;
• etching the second silicon oxide based film to define a horizontal interconnect that exposes the vertical interconnect opening in the low k etch stop;
• and
• etching the first silicon oxide based film through the vertical interconnect opening to define a vertical interconnect.

A method for depositing a low dielectric constant film, comprising:

• depositing a peroxide compound on a surface of a substrate;
• reacting the deposited peroxide compound with a silicon hydride containing compound or mixture, wherein the silicon hydride containing compound or mixture comprises formyloxy (CH(O)—O—), glyoxylyl (CH(O)—CO—O—), or formylcarbonyldioxy (CH(O)—O—CO—O—) groups;
• and
• annealing the substrate to form a silicon oxide based film;
• whereby dispersed voids are formed in the silicon oxide based film.

A method for depositing a low dielectric constant film, comprising:

• depositing a peroxide compound on a surface of a substrate;
• reacting the deposited peroxide compound with a silicon hydride containing compound or mixture, wherein the silicon hydride containing compound or mixture comprises:
• a silicon compound selected from a group consisting of silane, methylsilane, dimethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilanacyclohexane, cyclo-1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3-dimethyl-disiloxane, 1,3-bis(silanomethylene)-disiloxane, bis(1-methyldisiloxanyl)methane, and 2,2-bis(1-methyldisiloxanyl)propane, and fluorinated carbon derivatives thereof;
• and
• a non-silicon component selected from a group consisting of methyl maleic anhydride, 3-formyloxy-2,5-furandione, glycidaldehyde, oxiranylglyoxalate, dioxiranyl carbonate, dioxiranyl mesoxalate, and glycidic anhydride annealing the substrate to form a silicon oxide based film;
• whereby dispersed voids are formed in the silicon oxide based film.

A method for depositing a low dielectric constant film, comprising:

• depositing a peroxide compound on a surface of a substrate;
• reacting the deposited peroxide compound with a silicon hydride containing compound or mixture, wherein the silicon hydride containing compound or mixture comprises 1,3,5-trisilanacyclohexane, cyclo-1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, bis(formyloxysilano)-methane, or bis(glyoxylylsilano)methane, or fluorinated bridging carbon derivatives thereof;
• and
• annealing the substrate to form a silicon oxide based film;
• whereby dispersed voids are formed in the silicon oxide based film.