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AssigneeHitachi, Ltd.
InventorsToshio Masuda, Kazue Takahashi, Mitsuru Suehiro, Tetsunori Kaji, Saburo Kanai
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A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.
A plasma etching apparatus comprising a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to said processing chamber, an electrode for holding a sample to be processed in said vacuum processing chamber, and an evacuation system for reducing the pressure of said vacuum processing chamber, wherein:
A plasma etching apparatus comprising a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying gas to said processing chamber, an electrode for holding a sample to be processed in said vacuum processing chamber, and an evacuation system for reducing the pressure of said vacuum processing chamber, wherein:
Dependencies are inferred from the claim text.