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US 6,159,620 AGranted
Single-electron solid state electronic device
AssigneeThe Regents of the University of California
InventorsJames R. Heath, Daniel V. Leff, Gil Markovich
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Abstract
A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.
Claims23
A solid state electronic device comprising:
- a substrate;
- a first conductive thin film layer deposited on said substrate;
- a thin film nanocrystal layer of organically functionalized metal or metal alloy nanocrystals deposited on and in contact with said first conductive thin layer;
- a dielectric spacer layer in contact with said thin film nanocrystal layer;
- and
- a second conductive thin film layer deposited on and in contact with said dielectric spacer layer devices exhibiting single-electron behavior.
3 more elements
A solid state nanocrystal memory device exhibiting single-electron behavior manifested by Coulomb Blockade or Coulomb Staircase comprising:
- a source and drain region separated by a semiconductor channel;
- a first insulating layer deposited over said semiconductor channel;
- a thin film nanocrystal layer applied to said first insulating layer, said thin film nanocrystal layer comprising organically functionalized metal or metal alloy nanocrystals;
- a second insulating layer deposited over said nanocrystal layer;
- and
- a gate electrode applied to said second insulating layer.
3 more elements
Dependencies are inferred from the claim text.