Stress emission material and its manufacturing method
AssigneeAgency of Industrial Science and Technology
InventorsMorito Akiyama, Chaonan Xu, Kazuhiro Nonaka, Tadahiko Watanabe
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Abstract
The present invention provides a new stress emission material that is different from the other known materials and that efficiently emits light when subjected to a mechanical external force such as a frictional force, a shear force, an impact, or a pressure. This stress emission material is configured by adding an emission center comprising one or more rare earths or transition metals that emit light when electrons excited by a mechanical force return to their normal state, to a base material comprising one or more of an oxide, a sulfide, a carbide, and a nitride each having an FeS.sub.2 structure. This material has an emission intensity that depends on stress.
Claims7
A stress emission material comprising:
- a base material selected from an oxide, a sulfide, a carbide and a nitride, each having a FeS.sub.2 crystal structure doped with 0.01 to 20 wt. % of an emission center selected from the group consisting of rare earth metals, transition metals and a mixture thereof.
A device comprising:
- a) a stress emission material comprising a base material selected from an oxide, a sulfide, a carbide and a nitride, each having a FeS.sub.2 crystal structure doped with an emission center selected from the group consisting of rare earth metals, transition metals and a mixture thereof;
- and
- b) a mechanical excitation source for said stress emission material.
A stress emission material comprising:
- a base material comprising Ca.sub.3 Al.sub.2 O.sub.6 having a FeS.sub.2 crystal structure doped with 0.01 to 20 wt. % of an emission center comprising Nd.
A method for manufacturing a stress emission material comprising the following steps:
- adding 0.01 to 20 wt. % of at least one emission center selected from at least one rare earth or transition metal which emits light when the metal's electrons excited by a mechanical force return to the normal state, to a base material selected from oxides, sulfides, carbides, and nitrides each having an FeS.sub.2 structure;
- mixing the base material and the emission center together;
- and
- burning the mixture in a reducing atmosphere at 800 to 1,700.degree. C. to dope the base material with the emission center.
Dependencies are inferred from the claim text.