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US 6,157,867 AGranted
Method and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelength
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Ko Hwang, Ching-Wen Cho
Life of this patent
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Abstract
A method for operating a plasma processing system comprises the following steps. Produce a plasma in a plasma processing chamber operating upon a selected workpiece. Perform in situ detection of electromagnetic radiation of a certain wavelength generated in the plasma in the plasma processing chamber. Calculate a first intensity difference of the certain wavelength from a set point of intensity. Halt production of the plasma in the plasma processing chamber if the first intensity difference is outside of specifications.
Claims14
A method for operating a plasma processing system comprising:
- production of a plasma in a plasma processing chamber operating upon a selected workpiece,
- in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,
- calculating a first intensity difference of said certain wavelength from a set point of intensity,
- halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,
- calculating a relative intensity difference of said certain wavelength with respect to intensities at said certain wavelength of other workpieces, and
- halting production of said plasma in said plasma processing chamber if an additional intensity difference is outside of specifications.
3 more elements
A method for operating a plasma processing system comprising the steps as follows:
- production of a plasma in a plasma processing chamber operating upon a selected workpiece,
- in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,
- calculating a first intensity difference of said certain wavelength from a set point of intensity,
- halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,
- retrieving intensity set point data,
- collecting current workpiece intensity data,
- determining the current workpiece vs set point intensity difference by comparing said current workpiece intensity data to said intensity set point data,
- testing whether said intensity difference is outside of specifications for intensity;
- if YES, halting production of said plasma in said plasma processing chamber;
- and if NO, storing said current workpiece intensity data and then retrieving previous workpiece intensity data,
- retrieving current workpiece intensity data,
- determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,
- testing whether said relative intensity difference is outside of specifications for relative intensity difference, and
- if YES, halting production of said plasma in said plasma processing chamber.
11 more elements
Apparatus comprising a manufacturing and control system for operating a plasma processing system comprising:
- a plasma processing chamber for production of a plasma in a plasma processing chamber operating upon a selected workpiece,
- a spectrum detector for in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,
- means for calculating a first intensity difference of said certain wavelength from a set point of intensity,
- means for halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,
- calculating a relative intensity difference of said certain wavelength with respect to intensities at said certain wavelength of other workpieces, and
- means for halting production of said plasma in said plasma processing chamber if an additional intensity difference is outside of specifications.
3 more elements
Apparatus comprising a manufacturing and control system for operating a plasma processing system comprising:
- a plasma processing chamber for production of a plasma in a plasma processing chamber operating upon a selected workpiece,
- a spectrum detector for in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,
- means for calculating a first intensity difference of said certain wavelength from a set point of intensity,
- means for halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,
- means for retrieving intensity set point data,
- means for collecting current workpiece intensity data,
- means for determining the current workpiece vs set point intensity difference by comparing said current workpiece intensity data to said intensity set point data,
- means for testing whether said intensity difference is outside of specifications for intensity;
- if YES, halting production of said plasma in said plasma processing chamber;
- and if NO, storing said current workpiece intensity data and then retrieving previous workpiece intensity data,
- means for retrieving current workpiece intensity data,
- means for determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,
- means for testing whether said relative intensity difference is outside of specifications for relative intensity difference, and
- if YES, means for halting production of said plasma in said plasma processing chamber.
11 more elements
Dependencies are inferred from the claim text.