Defect inspection apparatus for silicon wafer
AssigneeHitachi, Ltd.
InventorsKoji Tomita, Muneo Maeshima, Shigeru Matsui, Hitoshi Komuro, Kazuo Takeda
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Abstract
In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.
Claims3
A defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample, which comprises:
- a detecting means for detecting, at a location where a defect exists, corresponding to a position of the said light beam, depth information and size information of said defect based on said light information;
- and
- a display apparatus for displaying a distribution of said defects on a graph having as coordinate axes a depth of said defect and a size of said defect, based on the depth information and the size information obtained by said detecting means.
Dependencies are inferred from the claim text.