Method and apparatus for controlling data erase operations of a non-volatile memory device
AssigneeFujitsu Limited
InventorsTakeshi Nagase, Shinpei Komatsu, Yoshihiro Takamatsuya
Life of this patent
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Abstract
A semiconductor memory device has a memory space which includes blocks and each of the blocks includes sectors. The sectors have a data storing region and a flag region. Data stored in a sector is marked as valid or erased, depending on the flags in the flag region. If an even number of the flags in the flag region have a logical value of 1, the data is considered to be erased. The data in each sector may be erased and unerased a number of times, by sequentially altering the value of the flags in the flag region. Data stored in the memory may be erased on a sector-by-sector basis.
Claims15
A semiconductor memory device comprising:
- a non-volatile memory unit having a plurality of blocks, each block including at least one sector, the at least one sector including a data storing region and a multi-bit flag region for storing a flag;
- and
- a control unit for writing, in an erase mode, a first bit of the flag region of a predetermined sector so that the sector is set to a spuriously-erased state in a sector-by-sector manner, wherein the spuriously erased state is designated based on the number of bits in the flag region having a first logical value, and writing, in a restore mode, a next bit of the flag region of the predetermined sector so that the sector is set to a restored state based on the number of bits in the flag region having the first logical value.
A semiconductor memory device comprising:
- a memory space which includes blocks, each of the blocks including sectors, the sectors having a data storing region and a multi-bit flag region;
- and
- a control unit for writing flags in the flag region to mark data stored in a predetermined sector as valid or erased, wherein the control unit determines that the data stored in the predetermined sector is considered to be erased if an even number of the flags in the flag region have a predetermined logical value and sequentially alters the predetermined logical value of the flags in the flag region so that the data in the predetermined sector may be alternately erased and valid a number of times.
A controller used in a semiconductor memory device having a plurality of blocks, each block including at least one sector, that at least one sector including a data storing region and a multi-bit flag region for storing a flag, the controller operating to:
- initialize the multi-bit flag in the flag region of a predetermined sector;
- write, in an erase mode, a first bit of the flag region of the predetermined sector so that the sector is set to a spuriously-erased state in a sector-by-sector manner, wherein the spuriously-erased state is designated based on the number of bits in the flag region having a first logical value;
- and
- write, in a restore mode, a next bit of the flag region of the predetermined sector so that the sector is set to a restored state based on the number of bits in the flag region having the first logical value.
A method of controlling a semiconductor memory device which comprises a non-volatile memory section having a plurality of blocks, each block including at least one sector, the at least one sector including a data storing region and a multi-bit flag region for storing a flag, the method comprising the steps of:
- initializing the multi-bit flag in the flag region of a predetermined sector;
- writing, in an erase mode, a first bit of the flag region of the predetermined sector so that the sector is set to a spuriously-erased state in a sector-by-sector manner, wherein the spuriously erased state is designated based on the number of bits in the flag region having a first logical value;
- and
- writing, in a restore mode, a next bit of the flag region of the predetermined sector so that the sector is set to a restored state based on the number of bits in the flag region having the first logical value.
A method of controlling a semiconductor memory device having a memory space which includes blocks, each block including sectors, the sectors having a data storing region and a multi-bit flag region for storing a flag, the method comprising the steps of:
- writing flags in the multi-bit flag region to mark data stored in a predetermined sector as valid or erased;
- determining that the data stored in the predetermined sector is considered to be erased is an even number of the flags in the flag region have a predetermined logical value;
- and
- sequentially altering the predetermined value of the flags in the multi-bit flag region so that the data in the predetermined sector is alternately erased and valid a number of times.
Dependencies are inferred from the claim text.