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AssigneeUnisearch Limited
InventorsMichael V Bazylenko, Mark Gross, Eric Gauja, Pak Lim Chu
Estimating the term…
The present invention relates to a method of fabricating optical devices and in particular to a method of fabricating integrated opto-electronic devices, and to an opto-electronic device. A plasma enhanced chemical vapor deposition process (PECVD) is used to deposit an optical device integrated in silicon onto an electronic device fabricated in silicon. Relatively low temperatures are utilized and, in order to reduce losses of a waveguide in the optical device in the wavelength range 1.50 to 1.53 .mu.m, the deposition process is carried out in the absence of nitrogen. An optical device is disclosed which comprises an integrated construction incorporating an optical waveguide in silica and a photonic transducer in silicon.
A method of fabricating an optical device on a substrate, comprising the step of forming an optical component by plasma enhanced chemical vapour deposition (PECVD) onto the substrate, the PECVD being carried out in the absence of nitrogen and nitrogen containing source materials.
An integrated opto-electronic device, comprising a multilayer silica structure fabricated on a semiconductor substrate, the silica structure incorporating a waveguide defining a light path and a reflector within the light path for steering light to or from an electro-optic transducer fabricated in the semiconductor substrate.
A method of fabricating an integrated opto-electronic device, comprising a multilayer silica structure fabricated on a semiconductor substrate, the silica structure comprising a waveguide defining a light path and a reflector within the light path for steering light to or from an electro optic transducer fabricated in the semiconductor substrate, the method comprising the steps of, forming a waveguide core in a multilayer silica structure on a semiconductor substrate, forming an angled step in the waveguide core, and treating a surface of the step to form a reflector for steering light to the electro-optic transducer in the semiconductor substrate.
Dependencies are inferred from the claim text.