Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same

A semiconductor device produced by photolithography using a photomask having a mask pattern corrected using a method of correction of a mask pattern, wherein the mask pattern of a photomask used in a photolithography process is made to deform so as to give a transfer image equal to a desired design pattern within a predetermined tolerance,

• said method of correcting a mask pattern comprising the steps of:
• arranging a plurality of evaluation points along an outer periphery of said desired design pattern, wherein said arranging further comprises locating evaluation points at corners of said desired design pattern and at predetermined intervals along sides of said desired design pattern;
• simulating a transfer image obtained by an exposure under predetermined transfer conditions using a photomask of said desired design pattern;
• comparing, for each evaluation point, a difference between a position of said evaluation point and a position of a corresponding point on said simulated transfer image;
• and
• deforming said design pattern in accordance with said comparison of said evaluation and corresponding points so as to decrease said differences in position between said evaluation points and said corresponding points on said simulated transfer image.