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US 6,154,476 AGranted
Semiconductor laser diode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHarumi Nishiguchi, Yuji Ohkura
Life of this patent
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Abstract
A semiconductor laser diode includes a p-type GaAs semiconductor substrate, a p-type region which includes a p-type AlGaAs lower cladding layer, an active layer and an n-type region which includes an n-type AlGaAs upper cladding layer, wherein the n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As (x.gtoreq.0.4) having a carrier concentration of no more than 6.times.10.sup.17 cm.sup.-3.
Claims7
A semiconductor laser diode comprising:
- a p-type GaAs semiconductor substrate;
- a p-type semiconductor region including a p-type AlGaAs lower cladding layer on said semiconductor substrate;
- an active layer on said p-type semiconductor region;
- and
- an n-type semiconductor region including an n-type AlGaAs upper cladding layer on said active layer, said n-type AlGaAs upper cladding layer comprising a first region covering substantially all of said active layer for confining light in said active layer and a ridge portion narrower than said first region for concentrating injected current in a laser oscillation region having a width in said active layer, wherein said n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As, (x.gtoreq.0.4), having a carrier concentration not exceeding 6.times.10.sup.17 cm.sup.-3 to prevent charge carriers from diffusing parallel to the width of said ridge in said first region of said n-type AlGaAs upper cladding layer and to achieve laser oscillation.
2 more elements
A semiconductor laser diode comprising:
- a p-type GaAs semiconductor substrate;
- a p-type semiconductor region including a p-type AlGaAs lower cladding layer on said semiconductor substrate;
- an active layer on said p-type semiconductor region;
- an n-type semiconductor region including an n-type AlGaAs upper cladding layer on said active layer, said n-type AlGaAs upper cladding layer comprising a first region covering substantially all of said active layer for confining light in said active layer and a ridge portion narrower than said first region for concentrating injected current in a laser oscillation region having a width in said active layer, wherein said n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As, (x.gtoreq.0.4) and has a carrier concentration not exceeding 6.times.10.sup.17 cm.sup.-3 and no current blocking layer is disposed on said n-type AlGaAs upper cladding layer;
- and
- an electrode confined to said ridge portion whereby current is efficiently injected into the laser oscillation region without current leakage through any current blocking layer.
3 more elements
Dependencies are inferred from the claim text.