Magnetically tunable and latchable broad-range semiconductor laser

Abstract

The invention provides a device with an improved tunable laser structure, the structure useful with surface emitting lasers and capable of exhibiting desirable latchability. The tunable laser of the invention contains a laser structure having a lower reflector, an active laser region, and an upper reflector. The upper reflector contains a non-moveable reflector portion located adjacent the active laser region and a moveable reflector portion located a spaced distance from the non-moveable reflector portion. A magnetic material is located either on a surface of the moveable reflector portion or on a surface in contact with the moveable reflector portion, and a programmable magnet is located near the magnetic material, the magnet capable of inducing controlled movement of the magnetic material. This movement in turn induces movement of the moveable reflector portion such that the spaced distance between the moveable reflector portion and the non-moveable reflector portion is capable of being adjusted. By adjusting this spaced distance (i.e., the air gap between the moveable and non-moveable reflector portions), the phase of reflection and thus the laser output wavelength is controlled.

Dependencies are inferred from the claim text.