Method and apparatus for reducing antifuse programming time
AssigneeMicron Technology, Inc.
InventorsDouglas J. Cutter, Kurt D. Beigel, Adrian E. Ong, Fan Ho, Patrick J. Mullarkey, Dien Luong, Brett Debenham, Kim Pierce
Life of this patent
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Abstract
Method and apparatus are disclosed for reducing antifuse programming time by connecting the programming voltage to the electrode of the antifuse element that has roughened polysilicon.
Claims12
A method of programming an antifuse element that has a roughened polysilicon electrode and a non-roughened polysilicon electrode, the method comprising the steps of:
- applying a programming voltage to the roughened polysilicon electrode;
- and
- grounding the non-roughened polysilicon electrode.
An antifuse circuit, comprising:
- an antifuse element having a roughened polysilicon layer and a non-roughened polysilicon layer;
- a dielectric layer being interposed between said roughened polysilicon layer and said non-roughened polysilicon layer;
- a first conductor coupled to said roughened polysilicon layer, said first conductor coupled to receive a programming voltage;
- and
- a second conductor coupled to said non-roughened polysilicon layer, said second conductor coupled to receive a reference voltage.
A semiconductor die comprising:
- a plurality of antifuse circuits, at least a portion of said plurality of antifuse circuits comprising:
- an antifuse element having a roughened polysilicon member and a non-roughened polysilicon member;
- circuitry for operatively coupling a programming voltage to said roughened polysilicon member;
- and
- circuitry for operatively coupling a reference voltage to said non-roughened polysilicon member.
A memory circuit comprising:
- a plurality of memory cells;
- and
- an antifuse element coupled to one of said plurality of memory cells, said antifuse element having a smooth conductive member and a roughened conductive member and having a dielectric material disposed between said smooth conductive member and said roughened conductive member, said roughened conductive member being coupled to receive a voltage for programming said antifuse element.
A memory circuit comprising:
- a memory array arranged in rows and columns, said array having a plurality of redundant rows;
- at least one antifuse element coupled to one of said plurality of redundant rows, said antifuse element having a smooth conductive member and a roughened conductive member and having a dielectric material disposed between said smooth conductive member and said roughened conductive member, said roughened conductive member being coupled to receive a voltage for programming said antifuse element.
A method of programming an anti-fuse element having a roughened electrode and a non-roughened electrode, the method comprising the acts of:
- (a) applying a programming voltage to the roughened electrode;
- and
- (b) applying a reference voltage to the non-roughened electrode.
A method of fabricating a programmable anti-fuse element comprising the acts of:
- (a) fabricating an antifuse element having a roughened electrode and a non-roughened electrode;
- (b) coupling a first conductor to the roughened electrode, the first conductor being coupled to receive a programming voltage;
- and
- (c) coupling a second conductor to the non-roughened electrode, the second conductor being coupled to receive a reference voltage.
Dependencies are inferred from the claim text.