Data input-output circuit and semiconductor data storage device provided therewith

A data input-output circuit of a semiconductor data storage device, comprising:

• (a) a temporary data storage circuit for temporarily storing data as input through an amplifier and outputting the data as input, the data as input comprises data of a data bus and a control data;
• and
• (b) an output buffer connected between the temporary data storage circuit and an input-output terminal of the semiconductor data storage device, the output buffer outputting the data of the data bus to the input-output terminal when the data of the data bus is input from the temporary data storage circuit, and changing an output of the output buffer to a high impedance state, in order to separate the output buffer from the input-output terminal, when the control data is input from the temporary data storage circuit;
• wherein the amplifier outputs the data of the data bus and the control data to the temporary data storage circuit.

A semiconductor data storage device comprising a memory cell array in which a number of memory cells are regularly arranged in the form of a matrix, a row decoder and a column decoder for selecting the respective memory cells of a plurality of the memory cells in the memory cell array, and a data input-output circuit for inputting and outputting data of the memory cells selected by the row decoder and the column decoder, the data input-output circuit comprising:

• (a) a temporary data storage circuit for temporarily storing data as input and outputting the data as input, the data as input comprises data of a data bus and a control data;
• (b) an output buffer connected between the temporary data storage circuit and the input-output terminal of the semiconductor data storage device, the output buffer outputting the data of the data bus to the input-output terminal when the data of the data bus is input from the temporary data storage circuit, and changing an output of the output buffer to a high impedance state, in order to separate the output buffer from the input-output terminal, when the control data is input from the temporary data storage circuit;
• and
• (c) an output control circuit for outputting the data of the data bus and the control data to the temporary data storage circuit.

A semiconductor data storage device comprising a memory cell array in which a number of the memory cells are regularly arranged in the form of a matrix, a row decoder and a column decoder for selecting the respective memory cells of a plurality of the memory cells in the memory cell array, and a data input-output circuit for inputting and outputting data of the memory cells selected by the row decoder and the column decoder, the data input-output circuit comprising;

• (a) a temporary data storage circuit for temporarily storing data as input through an amplifier and outputting the data as input, the data as input comprises data of a data bus and a control data;
• and
• (b) an output buffer connected between the temporary data storage circuit and the input-output terminal of the semiconductor data storage device, the output buffer outputting the data of the data bus to the input-output terminal when the data of the data bus in input from the temporary data storage circuit, and changing an output of the output buffer to a high impedance state, in order to separate the output buffer from the input-output terminal, when the control data is input from the temporary data storage circuit;
• wherein the amplifier outputs the data of the data bus and the control data to the temporary data storage circuit.