Cluster tool method using plasma immersion ion implantation

A cluster tool process for forming a silicon-on-insulator substrate, said process comprising steps of:

• providing a donor substrate;
• placing said donor substrate in a first chamber and introducing particles through a surface of said donor substrate to a predetermined selected depth underneath said surface, said particles being at a concentration at said selected depth to define a portion of donor substrate material to be removed above said selected depth;
• placing said donor substrate in a second chamber and joining said donor substrate to a target substrate, said surface of said donor substrate facing a face of said target substrate to form a multi-layered substrate;
• and
• placing said multi-layered substrate in a third chamber, and providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, wherein said cleaving action propagates a cleave front to free said portion of donor substrate material from said substrate.