Method and apparatus for predicting plasma-process surface profiles
AssigneeLam Research Corporation
InventorsMaria E. Barone, Richard A. Gottscho, Vahid Vahedi
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AssigneeLam Research Corporation
InventorsMaria E. Barone, Richard A. Gottscho, Vahid Vahedi
Estimating the term…
The invention provides a method for predicting a process surface profile that a given plasma process will create on a process substrate. The prediction is based on a test surface profile, the experimental outcome of a test process which is in general different from the plasma process of interest. In another aspect, the invention provides a technique for defining a plasma process that will produce a desired surface profile. Thus, in related aspects, the invention also provides apparatus for predicting a process surface profile and determining process values, a method of configuring a plasma reactor, a method of making semiconductor devices requiring limited empirical calibration, and a device made according to the method.
A method of determining a respective process value of at least one input variable governing a plasma process sequence for creating a desired surface profile on a process substrate, the method comprising the steps of:
A method of predictively calculating a process surface profile to be created on a process substrate by a plasma process sequence defined by a respective process value of at least one input variable, the method comprising the steps of:
A method of configuring an apparatus for processing a process substrate according to a plasma process sequence defined by a respective process value of at least one input variable, the apparatus including a plasma reactor, the at least one input variable including at least one reaction variable, the method comprising the steps of:
An apparatus for determining a respective process value of at least one input variable governing a plasma process sequence for creating a desired surface profile on a process substrate, the apparatus comprising:
An apparatus for predictively calculating a process surface profile to be created on a process substrate by a plasma process sequence defined by a respective process value of at least one input variable, the apparatus comprising:
Dependencies are inferred from the claim text.