Semiconductor laser
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHideto Adachi, Isao Kidoguchi, Yasuhito Kumabuchi
Life of this patent
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Abstract
A semiconductor laser includes at least an active layer and a saturable absorbing layer, and a compressive strain amount in the saturable absorbing layer is set to be greater than a value of compressive strain in the active layer by about 0.3% or more. Alternatively, a semiconductor laser includes at least an active layer, a saturable absorbing layer, and a light guiding layer disposed in the vicinity of the saturable absorbing layer; and a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more.
Claims18
A semiconductor laser comprising at least an active layer, and a saturable absorbing layer whose impurity concentration is at least about 1.times.10.sup.18 cm.sup.-3,
- wherein a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more.
A semiconductor laser comprising at least an active layer, and a saturable absorbing layer whose impurity concentration is at least about 1.times.10.sup.18 cm.sup.-3,
- wherein a compressive strain amount in the saturable absorbing layer is set to a value such that the compressive strain amount is greater than a value of compressive strain in the active layer and a coefficient of light confinement into the saturable absorbing layer is about 3% or more.
A semiconductor laser comprising at least an active layer, and a saturable absorbing layer whose impurity concentration is at least about 1.times.10.sup.18 cm.sup.-3,
- wherein a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer.
A semiconductor laser comprising an active layer, a saturable absorbing layer, and a light guiding layer disposed in this order,
- wherein a distance d between the active layer and the light guiding layer is set so that a coefficient of light confinement into the saturable absorbing layer is about 2% or more, and
- wherein a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer.
A semiconductor laser comprising at least an active layer, and a saturable absorbing layer whose thickness is about 150 angstroms or less,
- wherein a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer.
Dependencies are inferred from the claim text.