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US 6,151,199 AGranted
Semiconductor integrated circuit device
AssigneeRohm Co., Ltd.
InventorNoriaki Hiraga
Life of this patent
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Abstract
A semiconductor integrated circuit device has an open-drain-type output circuit in which an N-channel transistor has its source connected to a reference potential point and has its drain connected to an output terminal. The drain of the N-channel transistor is connected to the source of a P-channel transistor. The P-channel transistor has its source and gate connected together through a resistor, and has its drain connected to the reference potential point.
Claims4
A semiconductor integrated circuit device comprising:
- an N-channel MOS transistor having a gate to which a signal voltage is applied and having a source connected to a reference potential point;
- an output terminal connected to a drain of the N-channel MOS transistor;
- a P-channel MOS transistor having a source connected to the drain of the N-channel MOS transistor and having a drain connected to the reference potential point;
- and
- a resistor formed between the source and a gate of the P-channel MOS transistor,
- wherein, when a positive electrostatic charge is applied to the output terminal while the gate of the N-channel MOS transistor is receiving no input voltage and thus the semiconductor integrated circuit is not in operation, the P-channel MOS transistor is turned on so that the electrostatic charge is bypassed to the reference potential point.
3 more elements
Dependencies are inferred from the claim text.