Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby

A method of manufacturing a cathode for a plasma etching apparatus comprising steps of:

• a) forming a plurality of holes in a silicon substrate of the cathode;
• b) carrying out a step of first-cleaning the silicon substrate using megasonic waves, a chemical comprising HF, HNO.sub.3 and deionized water with a certain ratio, and deionized water, respectively and successively;
• c) carrying out a physical-surface treatment on a surface of the silicon substrate more than two times using slurry of various kinds and particle sizes;
• d) carrying out a chemical-surface treatment for removing protrusions inside the holes formed on the silicon substrate and on the surface of the silicon substrate using potassium hydroxide (KOH);
• e) carrying out a step of second-cleaning the silicon substrate using megasonic waves, a chemical comprising HF, HNO.sub.3 and deionized water with a certain ratio, and deionized water, respectively and successively, in order to remove particles remaining on the silicon substrate;
• and
• f) drying the silicon substrate using isopropyl alcohol and an oven, successively.