Semiconductor device

Abstract

To provide a substantially flat surface, a semiconductor device includes a first insulating film formed on one main surface of a semiconductor substrate, and a first lead layer buried in the first insulating film. A first bonding pad is formed in contact with the first lead layer. A second insulating film is formed on the first insulating film and the first lead layer. A second lead layer is formed on the second insulating film, and a second bonding pad includes part of the second lead layer. The height of the surface of the second lead layer is substantially equal to the height of the surface of the first bonding pad respectively from the one main surface of the semiconductor substrate. The first lead layer can be formed on the first insulating film in which case the second insulating film is formed on the first insulating film and the first lead layer such that a first bonding pad is buried in part in the second insulating film in contact with the first lead layer and is exposed in part out of the second insulating film. A second lead layer is formed on the second insulating film, and a height of a top surface of the second lead layer is substantially equal to a height of a top surface of the first bonding pad. A second bonding pad is constituted by part of the second lead layer. The first lead layer and the second lead layer can overlap each other at least in part via the second insulating film.

Dependencies are inferred from the claim text.