Copper stud structure with refractory metal liner

A damascene or dual damascene interconnect structure in a multilayer electronic component for connecting metallization on one layer to a trench or via extending to said metallization the electronic component having an enhanced electromigration lifetime comprising:

• a first layer of dielectric having a first layer of conductor therein comprising a first material;
• a first diffusion barrier layer over said first layer of dielectric and first layer of conductor;
• a second dielectric layer over said first diffusion barrier layer;
• a trench or via through said second dielectric layer and first diffusion barrier layer extending to said first layer of conductor;
• a first liner along sidewalls of said trench or via for providing a diffusion barrier to said second dielectric layer;
• and
• a second layer of conductor comprising said first material filling said trench or via contacting said first layer of conductor, said first liner not being located between said first and second layers of conductor.