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US 6,150,713 AGranted
Lead frame for semiconductor package and lead frame plating method
AssigneeSamsung Aerospace Industries, Ltd.
InventorsSe-chul Park, Kyu-han Lee, Ju-bong Kim, Sung-il Kang, Dong-il Shin, Bae-soon Jang
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Abstract
A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.
Claims17
A lead frame comprising:
- a metal substrate;
- an intermediate layer formed on at least one side surface of the metal substrate;
- and
- a protection layer plated with at least one metal among palladium, palladium alloy, gold, gold alloy, silver, and silver alloy to a thickness of 0.01 to 1.5 microinches by applying a modulated current, formed on the upper surface of the intermediate layer.
1 more element
A lead frame plating method comprising the steps of:
- (a) forming an intermediate layer on the upper surface of a metal substrate;
- (b) performing at least one of submerging the metal substrate into a plating solution and spraying the plating solution to the metal substrate;
- and
- (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.
1 more element
Dependencies are inferred from the claim text.