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US 6,150,706 AGranted
Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
AssigneeMicron Technology, Inc.
InventorsRandhir P. S. Thakur, Garry A. Mercaldi, Michael Nuttall
Life of this patent
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Abstract
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
Claims29
A capacitor, comprising:
- a silicon nitride dielectric having first and second opposite sides;
- a first semi-conductive electrode having a layer of silicon germanium having a first side adjacent to the first side of the silicon nitride dielectric and a second side adjacent to a layer of polysilicon;
- a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side;
- and
- a second electrode adjacent to the second side of the first barrier layer.
2 more elements
A capacitor, comprising:
- a silicon nitride dielectric having first and second opposite sides;
- a first semi-conductive electrode adjacent to the first side of the silicon nitride dielectric;
- a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side;
- and
- a second electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
2 more elements
A capacitor, comprising:
- a silicon nitride dielectric having first and second opposite sides;
- a first semiconductor electrode having a layer of silicon germanium having a first side adjacent to the first side of the dielectric and a second side adjacent to a layer of polysilicon;
- a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side;
- and
- a second semiconductor electrode adjacent to the second side of the first barrier layer.
2 more elements
A capacitor, comprising:
- a silicon nitride dielectric having first and second opposite sides;
- a first semiconductor electrode adjacent to the first side of the dielectric;
- a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side;
- and
- a second semiconductor electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second semiconductor electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
2 more elements
Dependencies are inferred from the claim text.